IBM memory technology promises to be 50 times faster … – Globo.com

IBM has developed a technology that allows the creation of memories up to 50 times faster than today, built around flash technology used in flash drives, SSDs, memory cards (such as cameras and mobile phones) and modules RAM, for example. Called PCM (abbreviation for “phase-change memory”), the project may cause the storage devices also become more resistant.

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in a quick comparison, the life of a stick can last around 3000 cycles. With the PCM resistance goes up to 10 million write cycles on the cells. The expectation is that the products begin to gain data center space before reaching the ordinary consumer.

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IBM technology works by changing the properties of a substance an amorphous condition to clear from the passage of electrical current (hence the idea of ​​”phase change” used in the name of the technology). The status difference is used to read the 0 or 1 binary code used by computers for data stored on any media.

According to the information collected by IBM, the PCM can achieving higher density, since a single cell can hold three bits. The capacity increase represents a 50% jump on the first version of the technology, demonstrated in 2011. In this sense, it means that memory devices made under these parameters can be smaller and cheaper than equivalent made from NAND idea flash.

Another extremely positive point of the optical technology is speed. According to the studies of the company, a PCM module responds to a request for data in less than 1 microsecond, while a RAM memory module, for example, reaches 70 microseconds, at best.

the technology should be employed first in very specific applications, such as supercomputers and data centers, but, according to IBM, the idea is to make viable and inexpensive technology enough to appear on mobile phones and home computers.

Via IBM, Engadget

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